Deviation of ballistic mobility in response to different channel-lengths in quantum-well FET

Abstract

To quantify the power performance advantage of short channel 111-V devices with respect to current state of the art strained Sian_d the role of effective carrier velocity in the channel have been investigated. Effect of channel length on carrier mobility and importance of quantum technology to develop transistors have been show ninth is work. Finally, the ballistic mobility using various compound semiconductor materials such as lnAs, lnGaAs, lnSb, lnP and GaAs have been simulated. After analyzing the simulation result, the conclusion maybe drawn that the mobility increases linearly if the channel length is reduced. Moreover, a higher mobility can be obtained by using a channel material having a lower effective mass.