استعرض Bangladeshi Journal حسب المؤلف "Hossain, Md. Imran"
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Simulation and analysis of various parameters of gate all around junction less nano-wire FET
Badiuzzaman, Md.; Islam, S. M. Tarequl; Hossain, Md. Imran (Faculty of Science and Engineering, NUB, 2018)All existing transistors are based on the use of semiconductor junctions formed by introducing doping atoms into the semiconductor material. As the distance between junctions in modern devices drops below 1Onm, extraordinarily ...