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VLSI fabrication principles: silicon and gallium arsenide

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VLSI Fabrication Principles, Silicon and Gallium Arsenide - 1994 Ghandi (Wiley, 2E)(1).pdf (38.59Mb)
Date
1994
Author
Ghandhi, Sorab K.
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Abstract
Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.
URI
http://hdl.handle.net/123456789/601
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  • Science and Engineering [224]

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